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savantic semiconductor product specification silicon npn power transistors 2SC2564 description with mt-200 package complement to type 2sa1094 high transition frequency applications for power amplifier applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25c) symbol parameter conditions value unit v cbo collector-base voltage open emitter 140 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i b base current 1.2 a p c collectorl power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC2564 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1a; i b =0 140 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5 a; i b =0.5 a 2.0 v v be base-emitter on voltage i c =5a ; v ce =5v 2.0 v i cbo collector cut-off current v cb =140v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =1a ; v ce =5v 55 240 h fe-2 dc current gain i c =5a ; v ce =5v 40 f t transition frequency i c =1a ; v ce =10v 80 mhz h fe-1 classifications r o y 55-110 80-160 120-240 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC2564 package outline fig.2 outline dimensions downloaded from: http:///

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